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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

โœ Scribed by R. Beresford; C. Lynch; E. Chason

Book ID
108341846
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
690 KB
Volume
251
Category
Article
ISSN
0022-0248

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Growth temperature dependence of strain relaxation during In 0.12 Ga 0.88 As/GaAs(0 0 1) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth tempe