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Kinetics of amorphous silicon dissolution into aluminum layers

✍ Scribed by P.K. Shetty; N.D. Theodore; J.W. Mayer; T.L. Alford


Book ID
113789257
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
228 KB
Volume
60
Category
Article
ISSN
0167-577X

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A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the "as-implanted" state. Prolonged heating at 350 Β°C leads to diffusion of met