Overview of Cu contamination during inte
โ
J Torres; J Palleau; F Tardif; H Bernard; A Beverina; P Motte; R Pantel; M Juhel
๐
Article
๐
2000
๐
Elsevier Science
๐
English
โ 510 KB
A detailed study of copper contaminating steps performed during integration of multilevel Cu metallisation in dual damascene architecture has been performed. Contamination at the wafer back and the bevel edge should make it difficult to use the same equipment for conventional technology and new copp