K-band single balanced mixer with high P1dB compression using 0.18 μm CMOS process

✍ Scribed by Sung-Hyun Kim; Han-Yeol Yu; Sung-Sun Choi; Yong-Hoon Kim

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 190 KB
• Volume: 48
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.21864

✦ Synopsis

coherent Ar ϩ laser beams with identical intensity ( ϭ 488 nm, the total intensity is 400 mW/cm 2 ) incident into photorefractive crystal at 2 ϭ 20°in the sample, in which the c-axis was oriented to be in the incident plane and perpendicular to the bisector of the two beams. An incoherent He-Ne laser beam ( ϭ 633 nm) with weak intensity (0.1 mW/cm 2 ) was used at Bragg angle 0 to measure the diffraction efficiency.

The photorefractive index changes of all samples were also listed in Table 3. It is clear that the optical damage of Nos. 1 or 2 is higher than that of No. 3. Moreover, the optical damage of Zn:Fe:NSLN was smaller than that of congruent one in the same case. Volk et al. [15] found that the photorefractive index change was about 5 ϫ 10 Ϫ5 when doping with 6.5 mol % ZnO in congruent sample, which was higher than that of No. 3. So nearstoichiometric Zn:Fe:LN crystal had higher ability to resist optical damage than congruent one.

4. CONCLUSION

A series of near-stoichiometric Zn:Fe:LN crystals were prepared from Li-rich melt by Czochralski method. We concluded that Fe 2ϩ/3ϩ replaced Li ϩ ions, but Zn 2ϩ preferred to replace antisite Nb Li 4ϩ (Nb on Li site) when Zn 2ϩ concentration was low in the Zn:Fe:NSLN crystals. When Zn 2ϩ concentration reached a certain magnitude, it began to replace Li Li ϩ (Li on normal Li site). Compared with congruent samples, near-stoichiometric Zn:Fe:LN crystals showed very excellent optical damage resistance in the case of lower ZnO dopant concentration than congruent ones. Near-stoichiometric Zn:Fe:LN crystals are very promising as a useful nonlinear optical material.