𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Simulation of direct tunneling through stacked gate dielectrics by a fully integrated 1D-Schrodinger-Poisson solver

✍ Scribed by Wettstein, A.; Schenk, A.; Fichtner, W.

Book ID: 121296174
Publisher: Japan Soc. Appl. Phys
Year: 1999
Tongue: Japanese
Weight: 305 KB
Category: Article
ISBN-13: 9784930813985
DOI: 10.1109/SISPAD.1999.799306

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Interconnect modeling for VLSIs

✍ Soo-Young Oh, ; Won-Young Jung, ; Jeong-Taek Kong, ; Keun-Ho Lee, 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 385 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Practical virtual cell designing environment

✍ Tatsumi, T.; Nakayama, H.; Mukai, M.; Komatsu, Y. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 443 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS devices

✍ Ghetti, A.; Hamad, A.; Silverman, P.J.; Vaidya, H.; Zhao, N. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 346 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness

✍ Zhiyi Han, ; Chung-Kai Lin, ; Goldsman, N.; Mayergoyz, I.; Yu, S.; Stettler, M. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 365 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Monte-Carlo method for direct computation of the small signal kinetic coefficients

✍ Nedjalkov, M.; Kosina, H.; Selberherr, S. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys ⚖ 304 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Effect of the tunneling rates on the conductance characteristics of single-electron transistors

✍ Scholze, A.; Schenk, A.; Fichtner, W. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 319 KB