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[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Practical virtual cell designing environment

✍ Scribed by Tatsumi, T.; Nakayama, H.; Mukai, M.; Komatsu, Y.

Book ID: 126614491
Publisher: Japan Soc. Appl. Phys
Year: 1999
Tongue: Japanese
Weight: 443 KB
Category: Article
ISBN-13: 9784930813985
DOI: 10.1109/SISPAD.1999.799286

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Interconnect modeling for VLSIs

✍ Soo-Young Oh, ; Won-Young Jung, ; Jeong-Taek Kong, ; Keun-Ho Lee, 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 385 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Monte-Carlo method for direct computation of the small signal kinetic coefficients

✍ Nedjalkov, M.; Kosina, H.; Selberherr, S. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys ⚖ 304 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Full-band quantum transport simulation based on tight-binding Green's function method

✍ Ogawa, M.; Sugano, T.; Tominaga, R.; Miyoshi, T. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 361 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS devices

✍ Ghetti, A.; Hamad, A.; Silverman, P.J.; Vaidya, H.; Zhao, N. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 346 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Effect of the tunneling rates on the conductance characteristics of single-electron transistors

✍ Scholze, A.; Schenk, A.; Fichtner, W. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 319 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - A new algorithm for interconnect capacitance extraction based on a fictitious domain method

✍ Putot, S.; Charlet, F.; Witomski, P. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 259 KB