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IVA-4 high field transport in GaAs-AlxGa1-xAs heterojunction layers

โœ Scribed by Keever, M.; Drummond, T.; Morkoc, H.; Hess, K.; Streetman, B.G.


Book ID
114593909
Publisher
IEEE
Year
1981
Tongue
English
Weight
93 KB
Volume
28
Category
Article
ISSN
0018-9383

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Accumulation layer and interface effects
โœ Alexander K. Freire; J.Ribeiro Filho; Gil A. Farias; Valder N. Freire ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 159 KB

A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef