Itinerant vs. localized antiferromagnetism of CuO2 layers
β Scribed by E. Arrigoni; G. Strinati; C. Castellani
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 115 KB
- Volume
- 162-164
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
We study the antiferromagnetic (AF) ground state of CuO~ layers within a slave-boson approach to a multiband Hubbard model, whereby slave bosons are assigfed to Cu sites to deal with the Hubbard repulsion Ua in the limit U~ = ~. The stability of the antiferromagnetism is tested by varying the separat1~on A between p a~d d hole energy levels and by allowing direct 0-0 hopping.
π SIMILAR VOLUMES
A model is developed for the motion of an electron in a 2d-quantumantiferromagnet (QAFM). The Hamiltonian for the layer consists of two parts: The H,\_rHamiltonian for nearest neighbours and the 3-site term. From the layer we derive by ejection of a single extra hole an effective Hamiltonian. The i