𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Isothermal DC and microwave characterizations of power RF silicon LDMOSFETs

✍ Scribed by Akhtar, S.; Roblin, P.; Sunyoung Lee; Strahler, J.

Book ID
114538962
Publisher
IEEE
Year
2001
Tongue
English
Weight
166 KB
Volume
48
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A method to obtain the isothermal static
A method to obtain the isothermal static DC curves of microwave FET power amplifiers
✍ G. Torregrosa-Penalva; A. Asensio-LΓ³pez; A. Blanco-del-Campo πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 100 KB

## Abstract This paper proposes a method to obtain the isothermal static DC curves of microwave FET power amplifiers, avoiding the use of pulsed measurements and accounting for the self‐heating problem in this type of device. The method requires the determination of the thermal resistance of the de

[Advanced Texts in Physics] Silicon Carb
[Advanced Texts in Physics] Silicon Carbide || Development of SiC Devices for Microwave and RF Power Amplifiers
✍ Choyke, W. J.; Matsunami, H.; Pensl, G. πŸ“‚ Article πŸ“… 2004 πŸ› Springer Berlin Heidelberg 🌐 English βš– 653 KB

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the