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Isolated GaAs transistors on high-resistivity GaAs substrate

✍ Scribed by W. von Munch; H. Statz; A.E. Blakeslee


Publisher
Elsevier Science
Year
1966
Tongue
English
Weight
190 KB
Volume
9
Category
Article
ISSN
0038-1101

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## Abstract A simple graphical statistical method is presented and is used to study the statistical sensitivity of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT) small‐signal performances to physical model parameters, Using an analytical model and applying numerical techniques, the small‐