Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

✍ Scribed by R. L. Puurunen; W. Vandervorst; W. F. A. Besling; O. Richard; H. Bender; T. Conard; C. Zhao; A. Delabie; M. Caymax; S. De Gendt; M. Heyns; M. M. Viitanen; M. De Ridder; H. H. Brongersma; Y. Tamminga; T. Dao; T. De Win; M. Verheijen; M. Kaiser; M. Tuominen

• Book ID: 125872783
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 666 KB
• Volume: 96
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1787624