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Is interfacial silicon carbide necessary for the epitaxy of diamond on (100) silicon?

✍ Scribed by Prof. Phillip John; Dr. David K. Milne; Dr. Michael G. Jubber; Prof. John I. B. Wilson


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
568 KB
Volume
3
Category
Article
ISSN
0948-1907

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Frequency and Duty Cycle Dependence on t
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Pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon is reported. A square waveform substrate bias was implemented in this investigation employing a pulse ON bias voltage of --250 V and a pulse OFF bias voltage of 0 V. An evaluation of the pulse ON fractions of 0.17 and 0.50 r