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Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study

✍ Scribed by M. Palard; M.O. Ruault; O. Kaïtasov; H. Bernas; K.H. Heinig

Book ID: 114168424
Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 332 KB
Volume: 120
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(96)00511-3

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