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Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

✍ Scribed by Tuomisto, F. ;Saarinen, K. ;Look, D. C.

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
85 KB
Volume
201
Category
Article
ISSN
0031-8965

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Irradiation-induced defects in InN and G
Irradiation-induced defects in InN and GaN studied with positron annihilation
✍ Reurings, Floris ;Tuomisto, Filip ;Egger, Werner ;LΓΆwe, Benjamin ;Ravelli, Luca πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 771 KB

## Abstract We use positron annihilation to study 2‐MeV ^4^He^+^ irradiated and subsequently rapid‐thermal‐annealed InN grown by molecular‐beam epitaxy and GaN grown by metal‐organic chemical‐vapour deposition. The irradiation fluences were in the range 5 × 10^14^–2 × 10^16^ cm^βˆ’2^. In vacancies ar