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Irradiation-induced atomic defects in SiC studied by positron annihilation

✍ Scribed by Rempel, A. A.; Schaefer, H. -E.

Book ID
120499546
Publisher
Springer
Year
1995
Tongue
English
Weight
202 KB
Volume
61
Category
Article
ISSN
1432-0630

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## Abstract We use positron annihilation to study 2‐MeV ^4^He^+^ irradiated and subsequently rapid‐thermal‐annealed InN grown by molecular‐beam epitaxy and GaN grown by metal‐organic chemical‐vapour deposition. The irradiation fluences were in the range 5 × 10^14^–2 × 10^16^ cm^−2^. In vacancies ar