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[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - High gain, wide margin Josephson junction OR and AND gates

✍ Scribed by Tsing-Chow Wang, ; Josephs, R.M.; Stein, B.F.; Young, P.L.; Flanery, W.E.

No coin nor oath required. For personal study only.

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