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[IRE 1974 International Electron Devices Meeting (IEDM) - Washigton, DC, USA (1974.12.9-1974.12.11)] 1974 International Electron Devices Meeting (IEDM) - Influence of high doping on the design of bipolar transistors

✍ Scribed by Mertens, R.P.; Van Overstraeten, R.J.; De Man, H.J.; Lindholm, F.A.; Kennedy, D.P.

Book ID: 121858475
Publisher: IRE
Year: 1974
Weight: 439 KB
Category: Article
DOI: 10.1109/IEDM.1974.6219791

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