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IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation

✍ Scribed by M. Vetter; I. Martı&#x0301;n; A. Orpella; J. Puigdollers; C. Voz; R. Alcubilla

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization and application of a-Si

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Role of hydrogen bonding environment in

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Role of a-Si:H bulk in surface passivati

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Low defect interface study of intrinsic

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ESR and IR studies on doped a-Si1 − xCx

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Synthesis, characterization and nanostru

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