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IR and SIMS studies in 70% SiC–C films of hydrogen introduced with different methods

✍ Scribed by L.W. Wang; B. Yang; D.Z. Wang; N.K. Huang


Book ID
103886275
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
308 KB
Volume
389
Category
Article
ISSN
0921-4526

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✦ Synopsis


70% SiC-C films were prepared with magnetron sputtering deposition followed by Ar + ion bombardment. Hydrogen was then introduced to these films with ion implantation and permeation techniques for a comparison. Infrared (IR) transmission measurements were performed to analyze the hydrogen-related vibrational states in carbon-carbide. And secondary ion mass spectrometry (SIMS) was also employed to analyze hydrogen depth profiles in these SiC-C films.


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