Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process

✍ Scribed by V. Goiffon; P. Magnan; O. Saint-Pé; F. Bernard; G. Rolland

• Book ID: 103857762
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 359 KB
• Volume: 610
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2009.05.078