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Ion milling of InP specimens with Ar/O2 for transmission electron microscopy

โœ Scribed by Ivey, D. G. ;Piercy, G. R.


Publisher
Wiley (John Wiley & Sons)
Year
1987
Tongue
English
Weight
149 KB
Volume
5
Category
Article
ISSN
0741-0581

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โœฆ Synopsis


Chew and C u l l i s (1984; 1985)

have r e p o r t e d s u c c e s s f u l i o c m i l l i n g of InP and InP devices u s i n g i o d i n e as t h e r e a c t i v e gas. The i o d i n e i o n s n o t only s p u t t e r atoms from t h e s u r f a c e , b u t a l s o chemically r e a c t w i t h t're excess indium t o form a v o l a t i l e h a l i d e .


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Improved sample preparation for cross-se
โœ Lee, Jeong Soo; Jeong, Young Woo; Kim, Sung Tae ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 735 KB

The rocking-angle ion-milling technique has been employed to produce optimum Pt/Ti/SiO,/Si, WITiN/Si021Si, and (Pb,La)TiO,/Pt/MgO samples for cross-sectional transmission electron microscopy (TEM). Because of the different ion-milling rates between film layers and substrate materials, no satisfactor