Ion irradiation induced surface modification studies of polymers using SPM
β Scribed by A. Tripathi; Amit Kumar; F. Singh; D. Kabiraj; D.K. Avasthi; J.C. Pivin
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 371 KB
- Volume
- 236
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
β¦ Synopsis
Various types of scanning probe microscopy (SPM) techniques: atomic force microscopy (AFM) (contact and tapping in height and amplitude mode), scanning tunnelling microscopy (STM) and conducting atomic force microscopy (C-AFM) are used for studying ion beam induced surface modifications, nanostructure/cluster formation and disintegration in polymers and similar soft carbon based materials. In the present study, the results of studies on four materials, namely, (A) methyltriethoxysilane/phenyltriethoxysilane (MTES/PTES) based gel, (B) triethoxisilane (TH) based gel, (C) highly oriented pyrolytic graphite (HOPG) bulk and (D) fullerene (C 60 ) thin films are discussed. In the case of Si based gels prepared from pre-cursors containing organic groups (MTES/PTES), hillocks are observed at the surface and their size decreases from 70 to 25 nm with increasing fluence, whereas, in the case of a gel with a stoichiometry SiO 1.25 H 1 , prepared from TH, an increases in the size of hillocks is observed. Hillocks are also formed at the surface of HOPG irradiated with 120 MeV Au beam at a low fluence, whereas, formation of craters and a re-organisation of surface features is observed at a higher fluence. In the case of C 60 films, 120 MeV Au ion irradiation induces the formation of conducting ion tracks, which is attributed to the transformation from insulating C 60 to conducting graphite like carbon.
π SIMILAR VOLUMES
Excimer laser irradiation of polymers can be used to generate a modi-Γcation of the surface morphology at the irradiated regions. The normally smooth surface of synthetic Γbres can be modiΓed by this non-contacting technique to a regular, roll-like structure, which has a great e β ect on general prop