Ion-beam-induced crystallization of carb
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Steffen, Hans Joachim
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Article
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1998
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John Wiley and Sons
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English
β 501 KB
The inΓuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.