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Ion implanted microstructure barrier in CVD rhenium

โœ Scribed by K.T. Kim; G. Welsch


Book ID
119124510
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
575 KB
Volume
12
Category
Article
ISSN
0167-577X

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In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 โ€ข 10 15 , 5 โ€ข 10 15 , 1 โ€ข 10 16 and 5 โ€ข 10 16 ions cm ร€2 and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microsco