Dual-energy Si ion implantation in epita
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D. Ozaki; J. Ebihara; Y. Ohshima; R. Takeuchi; T. Inada
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Article
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2007
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Elsevier Science
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English
⚖ 186 KB
Silicon ions have been implanted in undoped n-type GaN layers epitaxially grown on an AlN/(0001)-Al 2 O 3 substrate. Electrical profiles for n-type GaN layers, formed by dual-energy implantation with 50 and 100 keV Si + ions to a total fluence of 6 • 10 15 /cm 2 , have been examined by differential