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Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy

✍ Scribed by Jeffrey M. Leathersich, Mihir Tungare, Xiaojun Weng…


Book ID
120946296
Publisher
Springer US
Year
2013
Tongue
English
Weight
235 KB
Volume
42
Category
Article
ISSN
0361-5235

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Dual-energy Si ion implantation in epita
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Silicon ions have been implanted in undoped n-type GaN layers epitaxially grown on an AlN/(0001)-Al 2 O 3 substrate. Electrical profiles for n-type GaN layers, formed by dual-energy implantation with 50 and 100 keV Si + ions to a total fluence of 6 • 10 15 /cm 2 , have been examined by differential