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Ion implantation in advanced planar and vertical devices

โœ Scribed by Hans-Joachim L. Gossmann

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
118 KB
Volume
237
Category
Article
ISSN
0168-583X

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Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the