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Ion implantation and SIMS profiling of impurities in II-VI materials (HgCdTe and CdTe)

✍ Scribed by R.G. Wilson


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
755 KB
Volume
86
Category
Article
ISSN
0022-0248

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Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiÐcantly di †erent for impurity and matrix ion species. This kind of SIMS matrix e †ect severely aggravates concentration calibration in depth