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Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures

✍ Scribed by A. Guerrieri; A.V. Drigo; F. Romanato; N. Lovergine; A.M. Mancini


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
434 KB
Volume
16
Category
Article
ISSN
0921-5107

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Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γ‘uences ranging from 7.5 Γ‚ 1017 to 1 Γ‚ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc