Rutherford backscattering spectrometry c
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Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E.
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Article
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1999
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John Wiley and Sons
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English
β 158 KB
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Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γuences ranging from 7.5 Γ 1017 to 1 Γ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc