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Ion channeling analysis of Ge-Si superlattices

โœ Scribed by G.Q. Zhao; Y.H. Ren; Z.Y. Zhou; X.J. Zhang; G.L. Zhou; C. Sheng

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
184 KB
Volume
67
Category
Article
ISSN
0038-1098

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This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping, period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are