Ion Beam Modification of InSe Surfaces
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Brojerdi, G.; Tyuliev, G.; Fargues, D.; Eddrief, M.; Balkanski, M.
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Article
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1997
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John Wiley and Sons
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English
β 662 KB
Ion beam modiΓcation of InSe (single crystals and molecular beam epitaxy-grown thin Γlms on Si(111) substrate) by Ar' and O' (3 keV beam energy) is studied by XPS. The Ar' ion bombardment produces surface layer enrichment in metallic indium with a gradient of concentrations, i.e. the top surface lay