Ion Beam Modification of InSe Surfaces

✍ Scribed by Brojerdi, G.; Tyuliev, G.; Fargues, D.; Eddrief, M.; Balkanski, M.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 662 KB
• Volume: 25
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199702)25:2<111::aid-sia215>3.0.co;2-w

✦ Synopsis

Ion beam modiÐcation of InSe (single crystals and molecular beam epitaxy-grown thin Ðlms on Si(111) substrate) by Ar' and O' (3 keV beam energy) is studied by XPS. The Ar' ion bombardment produces surface layer enrichment in metallic indium with a gradient of concentrations, i.e. the top surface layer (10-15 contains less A ) metallic indium as compared to the modiÐed layers under it. Bombardment with O' ions produces an indium oxide layer (¿20 thick) on top of InSe. The relevance of the observed ion beam modiÐcations to the preparation of A solid state microbattery structures is discussed.