Si and Ge nanocrystals embedded in SiO 2 have attracted much attention due to their possible application in integrated optoelectronic devices. Ion beam mixing of Ge film into fused silica to form Ge nanoparticles is one of the possible methods to controllably produce embedded nanoclusters. In this w
Ion beam synthesis and doping of photonic nanostructures
β Scribed by R.G. Elliman; A.R. Wilkinson; Taehyun Kim; P. Sekhar; Shekhar Bhansali
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 413 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
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β¦ Synopsis
Optically-active silica nanowires are produced by metal-induced growth on silicon substrates using ion-implantation, with two different strategies employed for their fabrication. The first is based on Er implantation of nanowires produced by a thin-film Pd catalyst layer, and the second employing implanted Er as both the catalyst and dopant. The luminescence properties of the resulting Er-doped silica nanowires are reported and compared with similarly implanted fused silica samples. Comparison shows that the luminescence lifetime of Er is increased by incorporation within the nanowires due to a reduction in the density of available optical states in these structures. Additional details of the synthesis, structure and properties of these functionalised nanowires are also presented.
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