Embedded SiGe nanoparticles formed by at
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Kapil U. Joshi; D. Kabiraj; A.M. Narsale; D.K. Avasthi; T.N. Warang; D.C. Kothar
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Article
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2009
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Elsevier Science
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English
β 475 KB
Using atom beam co-sputtering of SiO 2 , Ge and Si targets, composite films containing Si, Ge and SiO x at different compositions were prepared and annealed at different temperatures . The influence of annealing temperatures on phase formation in the composite films was studied. The films were chara