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Ion-beam-induced modification of Ni silicides investigated by Auger-electron spectroscopy

✍ Scribed by Valeri, S.; del Pennino, U.; Sassaroli, P.; Ottaviani, G.

Book ID
121648418
Publisher
The American Physical Society
Year
1983
Tongue
English
Weight
326 KB
Volume
28
Category
Article
ISSN
1098-0121

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.