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Ion-beam induced damage and annealing behaviour in SiC

✍ Scribed by E. Wendler; A. Heft; W. Wesch


Book ID
114170108
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
994 KB
Volume
141
Category
Article
ISSN
0168-583X

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Annealing behaviour of In impurities in
✍ J. Meier; N. Achtziger; T. Licht; M. Uhrmacher; W. Witthuhn πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 337 KB

The annealing behaviour of indium impurities in SIC after ion implantation, and the formation and stability of complexes at In in Sic have been studied by perturbed angular correlation (PAC) spectroscopy for the first time. Samples of 6H-SiC and 3C-Sic single crystals were doped with radioactive "'I