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Ion-beam-induced crystal grain nucleation in amorphous silicon carbide

✍ Scribed by A Höfgen; V Heera; A Mücklich; F Eichhorn; W Skorupa

Book ID
114171961
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
183 KB
Volume
161-163
Category
Article
ISSN
0168-583X

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 × 10^17^ ions/cm^2^ at ion in