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Ion-beam-induced amorphization of 6H-SiC

✍ Scribed by Wolfgang Bolse; Jens Conrad; Thomas Rödle; Thomas Weber

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
442 KB
Volume
74-75
Category
Article
ISSN
0257-8972

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This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conve