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Ion beam deposited epitaxial thin silicon films

โœ Scribed by Kevin G. Orrman-Rossiter; Amir H. Al-Bayati; D.G. Armour; S.E. Donnelly; J.A. van den Berg

Book ID
113281526
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
614 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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โœ Gorris, F. ;Krug, C. ;Kubsky, S. ;Baumvol, I. J. R. ;Schulte, W. H. ;Rolfs, C. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 188 KB ๐Ÿ‘ 2 views

An ion beam deposition system to produce isotopically pure epitaxial thin films of different materials has been designed and built. Using negative ions, problems due to mass interference with molecular ions could be significantly reduced, thus allowing the production, for instance, of 29 Si films of