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Ion beam induced epitaxial recrystallization of alumina thin films deposited on sapphire

✍ Scribed by Ning Yu; Michael Nastasi


Book ID
113286870
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
397 KB
Volume
106
Category
Article
ISSN
0168-583X

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An ion beam deposition system to produce isotopically pure epitaxial thin films of different materials has been designed and built. Using negative ions, problems due to mass interference with molecular ions could be significantly reduced, thus allowing the production, for instance, of 29 Si films of