Ion beam analysis of PECVD silicon oxide
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F. Fernandez-Lima; J.A. Rodriguez; E. Pedrero; H.D. Fonseca Filho; A. Llovera; M
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Article
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2006
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Elsevier Science
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English
⚖ 202 KB
A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 lm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant ga