An ion beam deposition system to produce isotopically pure epitaxial thin films of different materials has been designed and built. Using negative ions, problems due to mass interference with molecular ions could be significantly reduced, thus allowing the production, for instance, of 29 Si films of
Ion beam analysis of high pressure deposition of epitaxial PZT thin films
โ Scribed by E. Andrade; O. Blanco; O.G. de Lucio; C. Solis; M.F. Rocha; E.P. Zavala
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 300 KB
- Volume
- 268
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
of Ti to a few percent. Pre-evaporation of a 300 ,~ thick CaF.~ parting layer allowed membrane removal by water-assisted peeling. Pressure testing showed membranes to have bulk tensile strength of 4.6-6.2,'< l09 dyn/cm 2 (68-92 kpsi) and to behave elastically. They could be mounted under high tensio
of Ti to a few percent. Pre-evaporation of a 300 ,~ thick CaF.~ parting layer allowed membrane removal by water-assisted peeling. Pressure testing showed membranes to have bulk tensile strength of 4.6-6.2,'< l09 dyn/cm 2 (68-92 kpsi) and to behave elastically. They could be mounted under high tensio