Iodine doping in amorphous carbon thin-films for optoelectronic devices

✍ Scribed by Ashraf M.M. Omer; Sudip Adhikari; Sunil Adhikary; Mohamad Rusop; Hideo Uchida; Masayoshi Umeno; Tetsuo Soga

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 135 KB
• Volume: 376-377
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.081

✦ Synopsis

We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (o100 1C). For film deposition, we used Ar and CH 4 as plasma source gases. The films were characterized by UV/Vis/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements. The optical band gap of the films decreased from 3 to 0.8 eV corresponding to non-doping to iodine doping conditions. The XPS results confirm the successful doping of iodine in the films. The Raman results show that iodine doping induced more graphitization in the films.