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Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC

✍ Scribed by L.L. Zheng; J.J. Li; M.S. Li; Y.C. Zhou

Book ID: 113649236
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 617 KB
Volume: 37
Category: Article
ISSN: 0360-3199
DOI: 10.1016/j.ijhydene.2011.02.083

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