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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

✍ Scribed by V. V. Antonov; A. V. Voitsekhovskii; M. A. Krivov; E. V. Malisova; É. N. Mel'chenko; M. P. Nikiforova; E. A. Popova; G. M. Fuks; S. S. Khludkov


Book ID
112425807
Publisher
Springer
Year
1981
Tongue
English
Weight
338 KB
Volume
24
Category
Article
ISSN
1573-9228

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