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Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application

✍ Scribed by Yao, Dongning; Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Cheng, Limin; Rao, Feng; Liu, Bo; Feng, Songlin


Book ID
119373510
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
430 KB
Volume
79
Category
Article
ISSN
0038-1101

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