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Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

✍ Scribed by Fu, Jing; Shen, Xiang; Nie, Qiuhua; Wang, Guoxiang; Wu, Liangcai; Dai, Shixun; Xu, Tiefeng; Wang, R.P.

No coin nor oath required. For personal study only.

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