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Investigation of vacancy-type complexes in GaN and AlN using positron annihilation

✍ Scribed by N. Yu. Arutyunov; A. V. Mikhailin; V. Yu. Davydov; V. V. Emtsev; G. A. Oganesyan; E. E. Haller

Book ID
110132585
Publisher
Springer
Year
2002
Tongue
English
Weight
69 KB
Volume
36
Category
Article
ISSN
1063-7826

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## Abstract The species of defects in Mg~0.5~Zn~0.5~Te, Li‐doped and P‐doped ZnTe samples were investigated by using positron‐based experiments. The positron lifetime experiments along with the atomic superposition (AT‐SUP) method were used to predict the positron trapping centers in the samples. T