Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides

✍ Scribed by Akbar, M.S.; Changhwan Choi; Se Jong Rhee; Krishnan, S.A.; Chang Yong Kang; Man Hong Zhang; Tackhwi Lee; Ok, I.; Feng Zhu; Hyoung-Sub Kim; Lee, J.C.

• Book ID: 114618251
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 607 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.872886