Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study

✍ Scribed by G.Venkateshwar Reddy; M.Jagadesh Kumar

• Book ID: 104050886
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 230 KB
• Volume: 35
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2004.06.003

✦ Synopsis

The novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG SOI MOSFET. The two-dimensional numerical simulation studies demonstrate that the application of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain output resistance, kink free output characteristics and increase in the breakdown voltage when compared with a conventional DG structure. For the first time, we show that the presence of single halo on the source side results in a step function in the surface potential, which screens the source side of the structure from the drain voltage variations. This work illustrates the benefits of high performance DG-SH SOI MOS devices over conventional DG MOSFET and provides an incentive for further experimental exploration.