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Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET

✍ Scribed by Chaudhry, A.; Kumar, M.J.

Book ID
114617542
Publisher
IEEE
Year
2004
Tongue
English
Weight
342 KB
Volume
51
Category
Article
ISSN
0018-9383

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Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study
✍ G.Venkateshwar Reddy; M.Jagadesh Kumar πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 230 KB

The novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG SOI MOSFET. The two-dimensional numerical simulation studies demonstrate that the application of single halo to the double gate structure res

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Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET
✍ Alok Kushwaha; Manoj K Pandey; A. K Gupta πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 316 KB

## Abstract A new two‐dimensional model for dual material double gate fully depleted SOI MOSFET is presented. An investigation of potential distribution in the silicon film is carried out with Pearson‐IV type doping distribution as it is essential to establish proper profiles to get the optimum per